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2SD2151 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2151 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2151 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA, IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=6A; IB=0.3A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=1A 1.5 V VBE sat-1 Base-emitter saturation voltage IC=6A; IB=0.3A 1.5 V VBE sat-2 Base-emitter saturation voltage IC=10A; IB=1A 2.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=3A ; VCE=2V 90 260 hFE-3 DC current gain IC=6A ; VCE=2V 30 fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 2.0 μs tf Fall time IC=6A ;IB1=-IB2=0.6A VCC=50V 0.2 μs hFE-2 Classifications Q P 90-180 130-260 |
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