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FC40SA50FKP 데이터시트(PDF) 6 Page - Vishay Siliconix |
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FC40SA50FKP 데이터시트(HTML) 6 Page - Vishay Siliconix |
6 / 10 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94542 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 12-May-10 FC40SA50FKP Vishay Semiconductors Power MOSFET, 40 A Fig. 12c - Unclamped Inductive Waveforms Fig. 13a - Gate Charge Test Circuit Fig. 13b - Basic Gate Charge Waveform Fig. 13c - Peak Diode Recovery dV/dt Test Circuit V (BR)DSS I AS t p - + D.U .T. V GS 1 mA I D R L V DS V G Charge V GS V Q G Q GD Q GS + - + + + - - - • dV/dt controlled by R G • Driver same type as D.U.T. • I SD controlled by duty factor "D" • D.U.T. - Device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 1 2 4 3 R G V DD |
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