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BU208A 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU208A 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU208A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 700 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V ICES Collector cut-off current VCE=1500V;VBE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4.5A ; VCE=5V 2.25 COB Output capacitance IE=0; VCB=10V;f=1MHz 125 pF fT Transition frequency IC=0.1A ; VCE=15V 7 MHz ts Storage time 10 μs tf Fall time IC=4.5A ;IB=1.8A LB=10μH 0.7 μs |
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