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BU1507DX ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Inchange Semiconductor Company Limited

๋ถ€ํ’ˆ๋ช… BU1507DX
์ƒ์„ธ๋‚ด์šฉ  isc Silicon NPN Power Transistor
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BU1507DX ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Inchange Semiconductor Company Limited

   
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU1507DX
ELECTRICAL CHARACTERISTICS
TC=25โ„ƒ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; IB= 0; L= 25mH
700
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
1.1
V
ICES
Collector Cutoff Current
VCE= VCESM; VBE= 0
VCE= VCESM; VBE= 0; TC=125โ„ƒ
1.0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.5V; IC= 0
160
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
14
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
5
9
VECF
C-E Diode Forward Voltage
IF= 4A
2.0
V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
68
pF
Switching Times Resistive Load
ts
Storage Time
6.0
ฮผs
tf
Fall Time
IC= 4A; IB(end)= 0.7A; LB= 6ฮผH;
-VBB= 4V
0.5
ฮผs
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