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GT100LA120UX 데이터시트(HTML) 1 Page - Vishay Siliconix

부품명 GT100LA120UX
상세내용  'Low Side Chopper' IGBT SOT-227 (Trench IGBT), 100 A
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제조사  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
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GT100LA120UX 데이터시트(HTML) 1 Page - Vishay Siliconix

 
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"Low Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
GT100LA120UX
Vishay Semiconductors
Document Number: 93099
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 22-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
FEATURES
• Trench IGBT technology
• Very low VCE(on)
• Square RBSOA
•HEXFRED® clamping diode
• 10 μs short circuit capability
• Fully isolated package
• Speed 4 kHz to 30 kHz
• Very low internal inductance (
 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRODUCT SUMMARY
VCES
1200 V
IC DC
100 A at 71 °C
VCE(on) typical at 100 A, 25 °C
2.36 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
VCES
1200
V
Continuous collector current
IC
TC = 25 °C
134
A
TC = 80 °C
92
Pulsed collector current
ICM
270
Clamped inductive load current
ILM
270
Diode continuous forward current
IF
TC = 25 °C
87
TC = 80 °C
59
Gate to emitter voltage
VGE
± 20
V
Power dissipation, IGBT
PD
TC = 25 °C
463
W
TC = 80 °C
260
Power dissipation, diode
PD
TC = 25 °C
338
TC = 80 °C
190
RMS isolation voltage
VISOL
Any terminal to case, t = 1 min
2500
V


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