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GT100LA120UX 데이터시트(HTML) 2 Page - Vishay Siliconix

부품명 GT100LA120UX
상세내용  'Low Side Chopper' IGBT SOT-227 (Trench IGBT), 100 A
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제조사  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
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GT100LA120UX 데이터시트(HTML) 2 Page - Vishay Siliconix

 
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GT100LA120UX
Vishay Semiconductors "Low Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 93099
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Jul-10
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 1 mA
1200
-
-
V
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 50 A
-
1.79
2.33
VGE = 15 V, IC = 100 A
-
2.36
2.85
VGE = 15 V, IC = 50 A, TJ = 125 °C
-
2.05
2.62
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2.8
3.42
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
5
5.8
7
Temperature coefficient of
threshold voltage
VGE(th)/TJ
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 15.6
-
mV/°C
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 1200 V
-
0.5
100
μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.052
2
mA
Diode reverse breakdown voltage
VBR
IR = 1 mA
1200
-
-
V
Diode forward voltage drop
VFM
IC = 50 A, VGE = 0 V
-
2.53
3.55
V
IC = 100 A, VGE = 0 V
-
3.32
4.35
IC = 50 A, VGE = 0 V, TJ = 125 °C
-
2.66
3.70
IC = 100 A, VGE = 0 V, TJ = 125 °C
-
3.70
4.50
Diode reverse leakage current
IRM
VR = VR rated
-
4
50
μA
TJ = 125 °C, VR = VR rated
-
0.6
3
mA
Gate to emitter leakage current
IGES
VGE = ± 20 V
-
-
± 200
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Qg
IC = 100 A, VCC = 600 V, VGE = 15 V
-
400
-
nC
Gate to emitter charge (turn-on)
Qge
-
120
-
Gate to collector charge (turn-on)
Qgc
-
170
-
Turn-on switching loss
Eon
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
-
21.9
-
mJ
Turn-off switching loss
Eoff
-5.48
-
Total switching loss
Etot
-
27.38
-
Turn-on switching loss
Eon
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
-
23.6
-
Turn-off switching loss
Eoff
-7.65
-
Total switching loss
Etot
-
31.25
-
Turn-on delay time
td(on)
-
195
-
ns
Rise time
tr
-
259
-
Turn-off delay time
td(off)
-
188
-
Fall time
tf
-
212
-
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 270 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
Fullsquare
Short circuit safe operating area
SCSOA
TJ = 150 °C, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
10
μs
Diode reverse recovery time
trr
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
-
129
161
ns
Diode peak reverse current
Irr
-11
14
A
Diode recovery charge
Qrr
-
700
1046
nC
Diode reverse recovery time
trr
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
-
208
257
ns
Diode peak reverse current
Irr
-17
21
A
Diode recovery charge
Qrr
-
1768
2698
nC


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