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ICTE5 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Vishay Siliconix

๋ถ€ํ’ˆ๋ช… ICTE5
์ƒ์„ธ๋‚ด์šฉ  TRANSZORB Transient Voltage Suppressors
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ICTE5 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Vishay Siliconix

   
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ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
Document Number: 88356
Revision: 07-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 ยฐC unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 3. Pulse Waveform
td - Pulse Width (s)
1.0 ฮผs
10 ฮผs
100 ฮผs
1.0 ms
10 ms
0.1 ฮผs
0.1
1
10
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A = 25 ยฐC
100
75
50
25
0
0
25
50
75
100
125
150
175
200
TJ - Initial Temperature (ยฐC)
0
50
100
150
t
r = 10 ฮผs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
10/1000 ฮผs Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
T
J = 25 ยฐC
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
Figure 4. Typical Junction Capacitance Uni-Directional
Figure 5. Typical Junction Capacitance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
VBR - Breakdown Voltage (V)
100
1000
10 000
100 000
10
1.0
100
200
Measured at
Zero Bias
Measured at Stand-Off
Voltage V
WM
T
J = 25 ยฐC
f = 1.0 MHz
V
sig = 50 mVp-p
VBR - Breakdown Voltage (V)
100
1000
10 000
100 000
10
1.0
100
200
Bi-Directional Type
Measured at
Zero Bias
Measured at Stand-Off
Voltage V
WM
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A = 25 ยฐC
Number of Cycles at 60 Hz
1
5
10
50
100
10
50
100
200
T
J = TJ max.
8.3 ms Single Half Sine-Wave


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