전자부품 데이터시트 검색엔진 |
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IRF530S 데이터시트(PDF) 6 Page - Vishay Siliconix |
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IRF530S 데이터시트(HTML) 6 Page - Vishay Siliconix |
6 / 9 page www.vishay.com Document Number: 91020 6 S11-1046-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S, SiHF530S Vishay Siliconix Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Rg IAS 0.01 Ω tp D.U.T L V DS + - V DD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp 200 0 40 80 120 160 25 150 125 100 75 50 Starting TJ, Junction Temperature (°C) Bottom Top I D 5.7 A 9.9 A 14 A V DD = 25 V 91020_12c 175 Q GS Q GD Q G VG Charge V GS D.U.T. 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 k Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. + - |
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유사한 설명 - IRF530S |
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