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IRFP054PBF 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 IRFP054PBF
부품 상세설명  Power MOSFET
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFP054PBF 데이터시트(HTML) 1 Page - Vishay Siliconix

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Document Number: 91200
www.vishay.com
S11-0447-Rev. C, 14-Mar-11
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRFP054, SiHFP054
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The
TO-247AC
package
is
preferred
for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mouting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 92 μH, Rg = 25
Ω, IAS = 90 A (see fig. 12).
c. ISD
≤ 90 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 90 A).
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (
Ω)VGS = 10 V
0.014
Qg (Max.) (nC)
160
Qgs (nC)
48
Qgd (nC)
54
Configuration
Single
N-Channel MOSFET
G
D
S
TO-247AC
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free
IRFP054PbF
SiHFP054-E3
SnPb
IRFP054
SiHFP054
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Currente
VGS at 10 V
TC = 25 °C
ID
70
A
Continuous Drain Current
TC = 100 °C
64
Pulsed Drain Currenta
IDM
360
Linear Derating Factor
1.5
W/°C
Single Pulse Avalanche Energyb
EAS
373
mJ
Maximum Power Dissipation
TC = 25 °C
PD
230
W
Peak Diode Recovery dV/dtc
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)d
for 10 s
300
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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