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IRFZ48R 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFZ48R 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91295 www.vishay.com S11-0518-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRFZ48R, SiHFZ48R Vishay Siliconix FEATURES • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dV/dt Rating • 175 °C Operating Temperature •Fast Switching • Fully Avalanche Rated • Drop in Replacement of the SiHFZ48 for Linear/Audio Applications • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω IAS = 72 A (see fig. 12). c. ISD ≤ 72 A, dV/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 60 RDS(on) ( Ω)VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single N-Channel MOSFET G D S TO-220AB G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFZ48RPbF SiHFZ48R-E3 SnPb IRFZ48R SiHFZ48R ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 50 A TC = 100 °C 50 Pulsed Drain Currenta IDM 290 Linear Derating Factor 1.3 W/°C Single Pulse Avalanche Energyb EAS 100 mJ Repetitive Avalanche Currenta IAR 50 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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