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IRLR014 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRLR014 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Document Number: 91321 www.vishay.com S10-1139-Rev. C, 17-May-10 1 Power MOSFET IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Surface Mount (IRLR014, SiHLR014) • Straight Lead (IRLU014, SiHLU014) • Available in Tape and Reel • Logic-Level Gate Drive •RDS(on) Specified at VGS = 4 V and 5 V •Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 Ω, IAS = 7.7 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω)VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) G D S S D G D ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHLR014-GE3 - SiHLR014TRL-GE3 SiHLU014-GE3 Lead (Pb)-free IRLR014PbF IRLR014TRPbFa IRLR014TRLPbFa IRLU014PbF SiHLR014-E3 SiHLR014T-E3a SiHLR014TL-E3a SiHLU014-E3 SnPb IRLR014 IRLR014TRa IRLR014TRLa IRLU014 SiHLR014 SiHLR014Ta SiHLR014TLa SiHLU014 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5.0 V TC = 25 °C ID 7.7 A TC = 100 °C 4.9 Pulsed Drain Currenta IDM 31 Linear Derating Factor 0.20 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 27.4 mJ Maximum Power Dissipation TC = 25 °C PD 25 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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