Document Number: 90416

www.vishay.com

S11-1044-Rev. C, 30-May-11

1

This document is subject to change without notice.

Power MOSFET

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

• 175°C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

accommodating die sizes up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

The through-hole version (IRLZ24L, SiHLZ24L) is available

for low-profile application.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material)

PRODUCT SUMMARY

60

0.10

18

4.5

12

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHLZ24S-GE3

SiHLZ24L-GE3

Lead (Pb)-free

-

IRLZ24LPbF

-

SiHLZ24L-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 10

Continuous Drain Current

17

A

12

68

Linear Derating Factor

0.40

W/°C

0.025

110

mJ

Maximum Power Dissipation

60

W

3.7

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply