전자부품 데이터시트 검색엔진 |
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MJE801T 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJE801T 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJE801T DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A ·Complement to Type MJE701T APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB B Base Current 0.1 A PC Collector Power Dissipation TC=25℃ 50 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc Website:www.iscsemi.cn |
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