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Q62702-D339 데이터시트(PDF) 3 Page - Siemens Semiconductor Group |
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Q62702-D339 데이터시트(HTML) 3 Page - Siemens Semiconductor Group |
3 / 5 page ![]() Semiconductor Group 3 BAS 40 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Unit Values Parameter Symbol min. typ. max. V Breakdown voltage IR = 10 µA V(BR) 40 – – µA Reverse current VR = 30 V VR = 40 V IR – – – – 1 10 mV Forward voltage IF = 1 mA IF = 10 mA IF = 40 mA VF – – – 310 450 720 380 500 1000 Ω Differential forward resistance IF = 10 mA, f = 10 kHz rf –10 – pF Diode capacitance VR = 0, f = 1 MHz CT –45 ps Charge carrier life time IF = 25 mA τ – – 100 DC characteristics |
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