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전자부품 데이터시트 검색엔진 |
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BAS70-06S 데이터시트(PDF) 1 Page - Siemens Semiconductor Group |
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BAS70-06S 데이터시트(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page ![]() BAS 70-06S Semiconductor Group Sep-07-1998 1 Silicon Schottky Diode Array • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment VPS05604 6 3 1 5 4 2 Type Marking Ordering Code Pin Configuration Package BAS 70-06S 76s Q62702-A3469 1/4=C1 2/5=C2 SOT-363 3/6=A1/A2 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 70 V Forward current IF 70 mA Surge forward current (t < 100µs) IFSM 100 Total power dissipation, TS ≤ 72 °C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top - 55 ...+150 Storage temperature Tstg - 55 ...+150 Thermal Resistance Junction - ambient 1) RthJA ≤ 545 K/W Junction - soldering point RthJS ≤ 310 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 1998-11-01 |
유사한 부품 번호 - BAS70-06S |
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유사한 설명 - BAS70-06S |
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