TIP141T datasheet(2/2 Pages) ISC

부품명	TIP141T

상세설명	isc Silicon NPN Darlington Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

TIP141T

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA, IB= 0

80

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A ,IB= 10mA

2.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A ,IB= 40mA

3.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 10A ,IB= 40mA

3.5

V

VBE(on)

Base-Emitter On Voltage

IC= 10A ; VCE= 4V

3.0

V

ICBO

Collector Cutoff current

VCB= 80V, IE= 0

1

mA

ICEO

Collector Cutoff current

VCE= 40V, IB= 0

2

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

2

mA

hFE-1

DC Current Gain

IC= 5A; VCE= 4V

1000

hFE-2

DC Current Gain

IC= 10A; VCE= 4V

500

Switching Times

td

Delay Time

0.15

μs

tr

Rise Time

0.55

μs

tstg

Storage Time

2.5

μs

tf

Fall Time

VCC = 30 V, IC = 5.0 A,

IB1= -IB2= 20 mA; tp= 20μs

Duty Cycle≤20%

2.5

μs

isc Website：www.iscsemi.cn

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Mospec Semiconductor	TIP141T	204Kb / 4P	POWER TRANSISTORS(10A,60-100V,80W)
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