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TIP152 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP152 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors TIP150/151/152 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT TIP150 300 TIP151 350 V(BR)CEO Collector-emitter breakdown voltage TIP152 IC=10mA, IB=0 400 V TIP150 300 TIP151 350 V(BR)CBO Collector-base breakdown voltage TIP152 IC=1mA, IE=0 400 V VCEsat-1 Collector-emitter saturation voltage IC=1A ,IB=10mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ,IB=100mA 1.5 V VCEsat-3 Collector-emitter saturation voltage IC=5A ,IB=250mA 2.0 V VBE sat-1 Base-emitter saturation voltage IC=2A ,IB=100mA 2.2 V VBE sat-2 Base-emitter saturation voltage IC=5A ,IB=250mA 2.3 V TIP150 VCE=300V, IB=0 TIP151 VCE=350V, IB=0 ICEO Collector cut-off current TIP152 VCE=400V, IB=0 250 μA IEBO Emitter cut-off current VEB=8V; IC=0 15 mA hFE-1 DC current gain IC=2.5A ; VCE=5V 150 hFE-2 DC current gain IC=5A ; VCE=5V 50 hFE-3 DC current gain IC=7A ; VCE=5V 15 VF Diode forward voltage IF=7A 3.5 V COB Output capacitance IE=0 ; VCB=10V;f=1MHz 150 pF Switching times td Delay time 0.03 μs tr Rise time 0.18 μs ts Storage time 3.5 μs tf Fall time VCC=250V; IC=5A IB1=-IB2=250mA tp=20μs;Duty Cycle≤2.0% 1.6 μs |
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