SI1034CX datasheet(2/8 Pages) VISHAY

부품명	SI1034CX

상세설명	Dual N-Channel 20 V (D-S) MOSFET

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Document Number: 67468

S11-0241-Rev. A, 14-Feb-11

Vishay Siliconix

Si1034CX

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

20

V

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

17

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 1.8

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.4

1.0

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 30

µA

VDS = 0 V, VGS = ± 4.5 V

± 1

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

VDS = 20 V, VGS = 0 V, TJ = 85 °C

10

On-State Drain Currenta

ID(on)

VDS =  5 V, VGS = 4.5 V

2

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 0.5 A

0.330

0.396



VGS = 2.5 V, ID = 0.2 A

0.380

0.456

VGS = 1.8 V, ID = 0.2 A

0.420

0.546

VGS = 1.5 V, ID = 0.05 A

0.505

0.760

Forward Transconductance

gfs

VDS = 10 V, ID = 0.5 A

7.5

S

Dynamicb

Input Capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

43

pF

Output Capacitance

Coss

14

Reverse Transfer Capacitance

Crss

8

Total Gate Charge

Qg

VDS = 10 V, VGS = 8 V, ID = 0.6 A

1.3

2

nC

VDS = 10 V, VGS = 4.5 V, ID = 0.6 A

0.75

1.2

Gate-Source Charge

Qgs

0.15

Gate-Drain Charge

Qgd

0.13

Gate Resistance

Rg

f = 1 MHz

2.4

12.2

24.4



Turn-On Delay Time

td(on)

VDD = 10 V, RL = 20 

ID  0.5 A, VGEN = 4.5 V, Rg = 1 

11

20

ns

Rise Time

tr

16

24

Turn-Off Delay Time

td(off)

26

39

Fall Time

tf

11

20

Drain-Source Body Diode Characteristics

Pulse Diode Forward Currenta

ISM

2A

Body Diode Voltage

VSD

IS = 0.5 A

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 0.5 A, dI/dt = 100 A/µs

10

15

nC

Body Diode Reverse Recovery Charge

Qrr

24

ns

Reverse Recovery Fall Time

ta

5

Reverse Recovery Rise Time

tb

5

유사한 부품 번호 - SI1034CX

제조업체	부품명	데이터시트	상세설명
Vishay Telefunken	SI1034CX	159Kb / 8P	Dual N-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI1034CX	162Kb / 8P	Dual N-Channel 20 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI1034CX	162Kb / 8P	Dual N-Channel 20 V (D-S) MOSFET 01-Jan-2022

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유사한 설명 - SI1034CX

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SI1034CX 데이터시트(PDF) 2 Page - Vishay Siliconix

SI1034CX 데이터시트(HTML) 2 Page - Vishay Siliconix

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