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SI1304BDL-T1-GE3 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI1304BDL-T1-GE3 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si1304BDL Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 www.vishay.com 1 N-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) a Qg (Typ.) 30 0.270 at VGS = 4.5 V 0.90 1.1 0.385 at VGS = 2.5 V 0.75 Ordering Information: Si1304BDL-T1-E3 (Lead (Pb)-free) Si1304BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-70 (3-LEADS) 1 2 3 Top View G S D Marking Code KF XX Lot Traceability and Date Code Part # Code N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 360 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 0.90 A TC = 70 °C 0.71 TA = 25 °C 0.85b, c TA = 70 °C 0.68b, c Pulsed Drain Current IDM 4 Continuous Source-Drain Diode Current TC = 25 °C IS 0.31 TA = 25 °C 0.28b, c Maximum Power Dissipation TC = 25 °C PD 0.37 W TC = 70 °C 0.24 TA = 25 °C 0.34b, c TA = 70 °C 0.22b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 315 375 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 285 340 |
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