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SI1441EDH 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI1441EDH
상세설명  P-Channel 20 V (D-S) MOSFET
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Document Number: 66823
S10-1827-Rev. A, 09-Aug-10
Vishay Siliconix
Si1441EDH
New Product
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 11
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
2.6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.4
- 1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
± 8
µA
VDS = 0 V, VGS = ± 4.5 V
± 1
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
- 15
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 5 A
0.034
0.041
VGS = - 2.5 V, ID = - 4.4 A
0.045
0.054
VGS = - 1.8 V, ID = - 1 A
0.067
0.100
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 5 A
16
S
Dynamicb
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 8 V, ID = - 5 A
22
33
nC
Gate-Source Charge
VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A
12.5
19
Qgs
1.8
Gate-Drain Charge
Qgd
3.3
Gate Resistance
Rg
f = 1 MHz
0.08
0.43
0.86
k
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1.4 
ID  - 4 A, VGEN = - 4.5 V, Rg = 1 
150
225
ns
Rise Time
tr
300
450
Turn-Off Delay Time
td(off)
1620
2430
Fall Time
tf
560
840
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1.4 
ID  - 4 A, VGEN = - 10 V, Rg = 1 
50
100
Rise Time
tr
90
180
Turn-Off Delay Time
td(off)
2500
3750
Fall Time
tf
600
900
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 2.3
A
Pulse Diode Forward Current
ISM
- 25
Body Diode Voltage
VSD
IS = - 4 A, VGS = 0 V
- 0.85
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
18
36
ns
Body Diode Reverse Recovery Charge
Qrr
816
nC
Reverse Recovery Fall Time
ta
18
ns
Reverse Recovery Rise Time
tb
10


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