전자부품 데이터시트 검색엔진 |
|
SI1441EDH 데이터시트(PDF) 2 Page - Vishay Siliconix |
|
SI1441EDH 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 66823 S10-1827-Rev. A, 09-Aug-10 Vishay Siliconix Si1441EDH New Product Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 11 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 2.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 10 V ± 8 µA VDS = 0 V, VGS = ± 4.5 V ± 1 Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5 A 0.034 0.041 VGS = - 2.5 V, ID = - 4.4 A 0.045 0.054 VGS = - 1.8 V, ID = - 1 A 0.067 0.100 Forward Transconductancea gfs VDS = - 10 V, ID = - 5 A 16 S Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 5 A 22 33 nC Gate-Source Charge VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 12.5 19 Qgs 1.8 Gate-Drain Charge Qgd 3.3 Gate Resistance Rg f = 1 MHz 0.08 0.43 0.86 k Turn-On Delay Time td(on) VDD = - 10 V, RL = 1.4 ID - 4 A, VGEN = - 4.5 V, Rg = 1 150 225 ns Rise Time tr 300 450 Turn-Off Delay Time td(off) 1620 2430 Fall Time tf 560 840 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1.4 ID - 4 A, VGEN = - 10 V, Rg = 1 50 100 Rise Time tr 90 180 Turn-Off Delay Time td(off) 2500 3750 Fall Time tf 600 900 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.3 A Pulse Diode Forward Current ISM - 25 Body Diode Voltage VSD IS = - 4 A, VGS = 0 V - 0.85 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 18 36 ns Body Diode Reverse Recovery Charge Qrr 816 nC Reverse Recovery Fall Time ta 18 ns Reverse Recovery Rise Time tb 10 |
유사한 부품 번호 - SI1441EDH |
|
유사한 설명 - SI1441EDH |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |