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SI4134DY 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI4134DY 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 68999 S11-0650-Rev. C, 11-Apr-11 Vishay Siliconix Si4134DY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 0.06 012 345 67 8 910 TJ =25 °C TJ = 125 °C ID =10A VGS - Gate-to-Source Voltage (V) 0 16 32 48 64 80 0 1 1 1 0 0 . 00.01 0.1 Time (s) Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s 10 s Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms DC |
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