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SI4214DDY-T1-GE3 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI4214DDY-T1-GE3 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 65022 S09-1817-Rev. B, 14-Sep-09 Vishay Siliconix Si4214DDY New Product Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 3.0 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA - 5.2 Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250 µA 1.2 2.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On -State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 8 A 0.016 0.0195 Ω VGS = 4.5 V, ID = 5 A 0.019 0.023 Forward Transconductanceb gfs VDS = 15 V, ID = 8 A 27 S Dynamica Input Capacitance Ciss VDS = 15 V, VGS = 0 V, ID = 1 MHz 660 pF Output Capacitance Coss 140 Reverse Transfer Capacitance Crss 86 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 8 A 14.5 22 nC VDS = 15 V, VGS = 4.5 V, ID = 8 A 7.1 11 Gate-Source Charge Qgs 1.9 Gate-Drain Charge Qgd 2.7 Gate Resistance Rg f = 1 MHz 0.5 2.6 5.2 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 14 28 ns Rise Time tr 45 80 Turn-Off Delay Time td(off) 18 35 Fall Time tf 12 24 Turn-On Delay Time td(on) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 714 Rise Time tr 10 20 Turn-Off Delay Time td(off) 15 30 Fall Time tf 714 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.8 A Pulse Diode Forward Currenta ISM 30 Body Diode Voltage VSD IS = 2 A 0.77 1.1 V Body Diode Reverse Recovery Time trr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 17 34 ns Body Diode Reverse Recovery Charge Qrr 918 nC Reverse Recovery Fall Time ta 10 nS Reverse Recovery Rise Time tb 7 |
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