SI4409DY datasheet(2/4 Pages) VISHAY

부품명	SI4409DY

상세설명	P-Channel 150-V (D-S) MOSFET

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SPICE Device Model Si4409DY

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

2.4

V

On-State Drain Current

a

ID(on)

VDS ≥ −5 V, VGS = −10 V

5.1

A

VGS = −10 V, ID = −0.50 A

0.96

0.95

Drain-Source On-State Resistance

a

rDS(on)

VGS = −6 V, ID = −0.50 A

1.1

1

Ω

Forward Transconductance

a

gfs

VDS = −10 V, ID = −0.50 A

1

2.2

S

Diode Forward Voltage

a

VSD

IS = −1 A

−0.77

−0.70

V

Dynamic

b

Input Capacitance

Ciss

361

332

Output Capacitance

Coss

25

Reverse Transfer Capacitance

Crss

VDS = −50 V, VGS = 0 V, f = 1 MHz

13

pF

VDS = −75 V, VGS = −10 V, ID = −0.50 A

6.5

7.7

Total Gate Charge

Qg

4.6

4.8

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

VDS = −75 V, VGS = −6 V, ID = −0.50 A

2.5

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 74891

S-71389

Rev. A, 16-Jul-07

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SI4409DY 데이터시트(PDF) 2 Page - Vishay Siliconix

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유사한 부품 번호 - SI4409DY

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