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SI4446DY-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI4446DY-T1-E3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 73661 S09-0322-Rev. B, 02-Mar-09 www.vishay.com 3 Vishay Siliconix Si4446DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 4 8 12 16 20 0 1234 5 VGS = 10 V thru 3 V VDS - Drain-to-Source Voltage (V) 2 V 0.020 0.025 0.030 0.035 0.040 0.045 0.050 04 8 12 16 20 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 1 2 3 4 5 6 0 12345 6 7 8 910 11 ID = 5.2 A Qg - Total Gate Charge (nC) VDS = 10 V VDS = 20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 125 - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 40 VDS - Drain-to-Source Voltage (V) Coss Ciss Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 5.2 A TJ - Junction Temperature (°C) |
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