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SI4620DY-T1-GE3 데이터시트(PDF) 5 Page - Vishay Siliconix |
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SI4620DY-T1-GE3 데이터시트(HTML) 5 Page - Vishay Siliconix |
5 / 13 page Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 www.vishay.com 5 Vishay Siliconix Si4620DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 40 10 1 VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA T - Temperature (°C) J On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 0.12 02 4 6 8 10 ID = 6 A VGS - Gate-to-Source Voltage (V) 25 °C 125 °C 0 30 50 10 20 Time (s) 40 1 100 600 10 10-1 10-2 10-3 Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 10 0.1 1 Limited by RDS(on)* TA = 25 °C Single Pulse BVDSS Limited P(t) = 1 P(t) = 10 DC P(t) = 0.01 P(t) = 0.1 P(t) = 0.001 P(t) = 0.0001 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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