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SI4776DY-T1-GE3 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI4776DY-T1-GE3 데이터시트(HTML) 1 Page - Vishay Siliconix |
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1 / 7 page  Vishay Siliconix Si4776DY New Product Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFETMonolithic TrenchFETPower MOSFET and Schottky Diode • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power and Memory - Low Side Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 95 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a Qg (Typ.) 30 0.016 at VGS = 10 V 11.9 5.5 nC 0.020 at VGS = 4.5 V 10.6 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G S D Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 11.9 A TC = 70 °C 9.5 TA = 25 °C 9.3b, c TA = 70 °C 7.5b, c Pulsed Drain Current (t = 300 µs) IDM 50 Continuous Source-Drain Diode Current TC = 25 °C IS 3.7 TA = 25 °C 2.3b, c Single Pulse Avalanche Current L = 0.1 mH IAS 10 Single Pulse Avalanche Energy EAS 5mJ Maximum Power Dissipation TC = 25 °C PD 4.1 W TC = 70 °C 2.6 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 40 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 24 30 |
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