SI4812BDY-T1-E3 datasheet(1/9 Pages) VISHAY

부품명	SI4812BDY-T1-E3

상세설명	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Vishay Siliconix

Si4812BDY

Document Number: 73038

S-83039-Rev. D, 29-Dec-08

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

LITTLE FOOT®

Plus Power MOSFET

•

100 % Rg Tested

MOSFET PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

30

0.016 at VGS = 10 V

9.5

0.021 at VGS = 4.5 V

7.7

SCHOTTKY PRODUCT SUMMARY

VDS (V)

VSD (V)

Diode Forward Voltage

IF (A)

30

0.50 V at 1.0 A

1.4

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free)

Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-channel MOSFET

G

S

Schottky Diode

D

Notes:

a. Surface Mounted on FR4 board.

b. t

≤ 10 s.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

10 s

Steady State

Drain-Source Voltage (MOSFET)

VDS

30

V

Reverse Voltage (Schottky)

30

Gate-Source Voltage (MOSFET)

VGS

± 20

Continuous Drain Current (TJ = 150 °C) (MOSFET)

a, b

TA = 25 °C

ID

9.5

7.3

A

TA = 70 °C

7.7

5.9

Pulsed Drain Current (MOSFET)

IDM

50

Continuous Source Current (MOSFET Diode Conduction)a, b

IS

2.1

1.2

Average Forward Current (Schottky)

IF

1.4

0.8

Pulsed Forward Current (Schottky)

IFM

30

Single Pulse Avalanche Current

L = 0.1 mH

IAS

5

Avalanche Energy

EAS

1.25

mJ

Maximum Power Dissipation (MOSFET)a, b

TA = 25 °C

PD

2.5

1.4

W

TA = 70 °C

1.6

0.9

Maximum Power Dissipation (Schottky)a, b

TA = 25 °C

2.0

1.2

TA = 70 °C

1.3

0.8

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Device

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient (t

≤ 10 s)a

MOSFET

RthJA

40

50

°C/W

Schottky

50

60

Maximum Junction-to-Ambient (t = Steady State)a

MOSFET

72

90

Schottky

85

100

Maximum Junction-to-Foot (t = Steady State)a

MOSFET

RthJF

18

23

Schottky

24

30

유사한 부품 번호 - SI4812BDY-T1-E3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4812BDY-E3	254Kb / 9P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 29-Dec-08

More results

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SI4812BDY-T1-E3 데이터시트(PDF) 1 Page - Vishay Siliconix

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