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SI4946BEY 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI4946BEY
상세설명  Dual N-Channel 60-V (D-S) 175 °C MOSFET
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제조업체  VISHAY [Vishay Siliconix]
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Logo VISHAY - Vishay Siliconix

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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Vishay Siliconix
Si4946BEY
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
60
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
53
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 6.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.0
2.4
3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
µA
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5.3 A
0.033
0.041
Ω
VGS = 4.5 V, ID = 4.7 A
0.041
0.052
Forward Transconductancea
gfs
VDS = 15 V, ID = 5.3 A
24
S
Dynamicb
Input Capacitance
Ciss
VDS = 30 V, VGS = 0 V, f = 1 MHz
840
pF
Output Capacitance
Coss
71
Reverse Transfer Capacitance
Crss
44
Total Gate Charge
Qg
VDS = 30 V, VGS = 10 V, ID = 5.3 A
17
25
nC
VDS = 30 V, VGS = 5 V, ID = 5.3 A
9.2
12
Gate-Source Charge
Qgs
3.3
Gate-Drain Charge
Qgd
3.7
Gate Resistance
Rg
f = 1 MHz
3.1
6.5
9.5
Ω
Turn-On Delay Time
td(on)
VDD = 30 V, RL = 6.8 Ω
ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω
20
30
ns
Rise Time
tr
120
180
Turn-Off Delay Time
td(off)
20
30
Fall Time
tf
30
45
Turn-On Delay Time
td(on)
VDD = 30 V, RL = 6.8 Ω
ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω
10
15
Rise Time
tr
12
20
Turn-Off Delay Time
td(off)
25
40
Fall Time
tf
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
3.1
A
Pulse Diode Forward Currenta
ISM
30
Body Diode Voltage
VSD
IS = 2 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
25
50
ns
Body Diode Reverse Recovery Charge
Qrr
25
50
nC
Reverse Recovery Fall Time
ta
18
ns
Reverse Recovery Rise Time
tb
7


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