SI5424DC datasheet(1/11 Pages) VISHAY

부품명	SI5424DC

상세설명	N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si5424DC

Document Number: 73776

S-83054-Rev. B, 29-Dec-08

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFET

APPLICATIONS

• Load Switch

- Notebook PC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.024 at VGS = 10 V

6

11 nC

0.030 at VGS = 4.5 V

6

Ordering Information: Si5424DC-T1-E3 (Lead (Pb)-free)

Si5424DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

ChipFET 1206-8

D

G

D

S

1

Bottom View

Marking Code

AF

XXX

Lot Traceability

and Date Code

Part # Code

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface Mounted on 1” x 1” FR4 board.

c. t = 5 s.

d. See Solder Profile

(www.vishay.com/doc?73257). The ChipFET 1206-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 25

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

6a

A

TC = 70 °C

6a

TA = 25 °C

6a

TA = 70 °C

6a

Pulsed Drain Current

IDM

40

Continuous Source-Drain Diode Current

TC = 25 °C

IS

5.2a

TA = 25 °C

2.1b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

16

Avalanche Energy

EAS

12.8

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

6.25

W

TC = 70 °C

4

TA = 25 °C

2.5b, c

TA = 70 °C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 5 s

RthJA

40

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

15

20

유사한 부품 번호 - SI5424DC

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI5424DC	111Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. B, 29-Dec-08
Vishay Telefunken	SI5424DC	236Kb / 11P	N-Channel 30 V (D-S) MOSFET
Vishay Siliconix	SI5424DC-T1-E3	111Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. B, 29-Dec-08
Vishay Siliconix	SI5424DC	239Kb / 11P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022

More results

유사한 설명 - SI5424DC

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

More results

SI5424DC 데이터시트(PDF) 1 Page - Vishay Siliconix

SI5424DC 데이터시트(HTML) 1 Page - Vishay Siliconix

유사한 부품 번호 - SI5424DC

유사한 설명 - SI5424DC

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