SI5471DC-T1-GE3 datasheet(1/11 Pages) VISHAY

부품명	SI5471DC-T1-GE3

상세설명	P-Channel 20-V (D-S) MOSFET

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Vishay Siliconix

Si5471DC

New Product

Document Number: 64988

S09-1000-Rev. A, 01-Jun-09

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switches

- Notebook

- Netbook

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 95 °C/W.

e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

g. TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a, g

Qg (Typ.)

- 20

0.020 at VGS = - 4.5 V

- 6

30 nC

0.028 at VGS = - 2.5 V

- 6

0.062 at VGS = - 1.8 V

- 6

Ordering Information: Si5471DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

1206-8 ChipFET

D

G

D

S

1

Bottom View

®

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 6a

A

TC = 70 °C

- 6a

TA = 25 °C

- 6a, b, c

TA = 70 °C

- 6a, b, c

Pulsed Drain Current

IDM

- 25

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 5.2

TA = 25 °C

- 2.1b, c

Maximum Power Dissipation

TC = 25 °C

PD

6.3

W

TC = 70 °C

4

TA = 25 °C

2.5b, c

TA = 70 °C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)e, f

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c, d

t

≤ 5 s

RthJA

40

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

15

20

유사한 부품 번호 - SI5471DC-T1-GE3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI5471DC-T1-GE3	263Kb / 11P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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SI5471DC-T1-GE3 데이터시트(PDF) 1 Page - Vishay Siliconix

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유사한 부품 번호 - SI5471DC-T1-GE3

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