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SI5513CDC-T1-GE3 데이터시트(PDF) 7 Page - Vishay Siliconix |
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SI5513CDC-T1-GE3 데이터시트(HTML) 7 Page - Vishay Siliconix |
7 / 16 page Document Number: 68806 S10-0547-Rev. C, 08-Mar-10 www.vishay.com 7 Vishay Siliconix Si5513CDC N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.2 0.1 Square WavePulse Duration (s) 1 0.1 0.01 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 95 °C/W 3. TJM -TA =PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 1 0.1 0.01 0.2 Duty Cycle = 0.5 Square WavePulse Duration (s) 10-3 10-2 1 10-1 10-4 0.05 0.02 Single Pulse 0.1 |
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