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SI6928DQ 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI6928DQ
상세설명  Dual N-Channel 30-V (D-S) MOSFET
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Document Number: 70663
S-81056-Rev. D, 12-May-08
Vishay Siliconix
Si6928DQ
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 4.0 A
0.027
0.035
Ω
VGS = 4.5 V, ID = 3.4 A
0.038
0.050
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.0 A
13
S
Diode Forward Voltagea
VSD
IS = 1.25 A, VGS = 0 V
0.73
1.2
V
Dynamicb
Gate Charge
Qg
VDS = 15 V, VGS = 5 V, ID = 4.0 A
914
nC
Total Gate Charge
Qgt
VDS = 15 V, VGS = 10 V, ID = 4.0 A
17.5
30
Gate-Source Charge
Qgs
4.0
Gate-Drain Charge
Qgd
2.5
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 6 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
12
20
ns
Rise Time
tr
920
Turn-Off Delay Time
td(off)
25
50
Fall Time
tf
20
40
Source-Drain Reverse Recovery Time
trr
IF = 1.25 A, dI/dt = 100 A/µs
25
60


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