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SI6954ADQ-T1-GE3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI6954ADQ-T1-GE3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 71130 S-81221-Rev. C, 02-Jun-08 Vishay Siliconix Si6954ADQ TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71130. Threshold Voltage - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient 0 15 30 5 10 Time (s) 20 25 1 600 10 10-1 10-3 100 10-2 Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 126 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 110 10-1 10-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) |
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