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SI7186DP-T1-E3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI7186DP-T1-E3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 69257 S09-0271-Rev. B, 16-Feb-09 Vishay Siliconix Si7186DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.001 10 100 0.00 0.2 0.4 0.6 0.8 25 °C 150 °C VDS - Source-to-Drain Voltage (V) 1 0.1 0.01 TJ - Temperature (°C) - 1.5 - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient VGS - Gate-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 4 567 89 10 125 °C 25 °C ID = 10 A 0 40 80 120 160 200 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 100 1 0 0 1 0 1 1 1 0 . 0 0.01 10 0.1 0.1 TA = 25 °C Single Pulse VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* 1 ms 10 ms 100 ms DC 10 s 1 s |
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