SI7216DN-T1-E3 datasheet(1/14 Pages) VISHAY

부품명	SI7216DN-T1-E3

상세설명	Dual N-Channel 40-V (D-S) MOSFET

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Vishay Siliconix

Si7216DN

Document Number: 73771

S11-1142-Rev. C, 13-Jun-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual N-Channel 40-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFET

•

Low Thermal Resistance PowerPAK®

Package with Small Size and Low 1.07 mm

Profile

•

100 % Rg and UIS tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Primary Side Switch

•

Synchronus Rectification

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (

www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequade bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

Qg (Typ.)

40

0.032 at VGS = 10 V

6e

5.5 nC

0.039 at VGS = 4.5 V

5e

PowerPAK 1212-8

Bottom View

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

3.30 mm

Ordering Information: Si7216DN-T1-E3 (Lead (Pb)-free)

Si7216DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

6e

A

TC = 70 °C

5e

TA = 25 °C

6.5a, b

TA = 70 °C

5.2a, b

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

6e

TA = 25 °C

2a, b

Avalanche Current

L = 0.1 mH

IAS

10

Single-Pulse Avalanche Energy

EAS

5mJ

Maximum Power Dissipation

TC = 25 °C

PD

20.8

W

TC = 70 °C

13.3

TA = 25 °C

2.5a, b

TA = 70 °C

1.6a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 50 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

유사한 부품 번호 - SI7216DN-T1-E3

제조업체	부품명	데이터시트	상세설명
Vishay Telefunken	SI7216DN	565Kb / 14P	Dual N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI7216DN	569Kb / 14P	Dual N-Channel 40-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI7216DN	569Kb / 14P	Dual N-Channel 40-V (D-S) MOSFET 01-Jan-2022

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유사한 설명 - SI7216DN-T1-E3

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SI7216DN-T1-E3 데이터시트(HTML) 1 Page - Vishay Siliconix

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