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SI7478DP-T1-GE3 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI7478DP-T1-GE3
상세설명  N-Channel 60-V (D-S) MOSFET
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Document Number: 72913
S09-0271-Rev. D, 16-Feb-09
Vishay Siliconix
Si7478DP
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
µA
VDS = 60 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
40
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 20 A
0.006
0.0075
Ω
VGS = 4.5 V, ID = 18.5 A
0.007
0.0088
Forward Transconductancea
gfs
VDS = 15 V, ID = 20 A
63
S
Diode Forward Voltagea
VSD
IS = 4.5 A, VGS = 0 V
0.76
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 30 V, VGS = 10 V, ID = 20 A
105
160
nC
Gate-Source Charge
Qgs
22
Gate-Drain Charge
Qgd
19
Gate Resistance
Rg
0.5
1.0
1.5
Ω
Turn-On Delay Time
td(on)
VDD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
25
40
ns
Rise Time
tr
20
30
Turn-Off Delay Time
td(off)
115
175
Fall Time
tf
45
70
Source-Drain Reverse Recovery Time
trr
IF = 4.5 A, dI/dt = 100 A/µs
41
70
Output Characteristics
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 10 V thru 4 V
3 V
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25 °C
TC = 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)


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