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SI7748DP 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI7748DP 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 68785 S-81714-Rev. A, 04-Aug-08 Vishay Siliconix Si7748DP New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 30 V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 1.3 2.7 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 0.075 0.30 mA VDS = 30 V, VGS = 0 V, TJ = 100 °C 6.7 65 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 40 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 15 A 0.0039 0.0048 Ω VGS = 4.5 V, ID = 10 A 0.0053 0.0066 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 80 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 3770 pF Output Capacitance Coss 575 Reverse Transfer Capacitance Crss 215 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 61 92 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 27.8 42 Gate-Source Charge Qgs 10.2 Gate-Drain Charge Qgd 7.3 Gate Resistance Rg f = 1 MHz 0.2 1.0 2.0 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 15 30 ns Rise Time tr 918 Turn-Off Delay Time td(off) 35 70 Fall Time tf 816 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 36 75 Rise Time tr 16 30 Turn-Off Delay Time td(off) 44 85 Fall Time tf 16 30 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 50 A Pulse Diode Forward Currenta ISM 80 Body Diode Voltage VSD IS = 2 A 0.42 0.55 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 25 50 ns Body Diode Reverse Recovery Charge Qrr 13 26 nC Reverse Recovery Fall Time ta 12 ns Reverse Recovery Rise Time tb 13 |
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