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SI7772DP-T1-GE3 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI7772DP-T1-GE3
상세설명  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Vishay Siliconix
Si7772DP
www.vishay.com
2
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.2
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
0.028
0.2
mA
VDS = 30 V, VGS = 0 V, TJ = 100 °C
220
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
0.0105
0.013
Ω
VGS = 4.5 V, ID = 10 A
0.013
0.0165
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
37
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1084
pF
Output Capacitance
Coss
200
Reverse Transfer Capacitance
Crss
77
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
18.5
28
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
8.3
12.5
Gate-Source Charge
Qgs
2.8
Gate-Drain Charge
Qgd
2
Gate Resistance
Rg
f = 1 MHz
0.3
1.3
2.6
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
16
30
ns
Rise Time
tr
18
35
Turn-Off Delay Time
td(off)
15
30
Fall Time
tf
10
20
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
816
Rise Time
tr
11
22
Turn-Off Delay Time
td(off)
17
34
Fall Time
tf
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
27
A
Pulse Diode Forward Currenta
ISM
50
Body Diode Voltage
VSD
IS = 1 A
0.48
0.65
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
17
34
ns
Body Diode Reverse Recovery Charge
Qrr
714
nC
Reverse Recovery Fall Time
ta
10
ns
Reverse Recovery Rise Time
tb
7


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