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SI7900AEDN 데이터시트(PDF) 10 Page - Vishay Siliconix

부품명 SI7900AEDN
상세설명  Dual N-Channel 20-V (D-S) MOSFET, Common Drain
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
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SI7900AEDN 데이터시트(HTML) 10 Page - Vishay Siliconix

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Document Number 71681
03-Mar-06
Vishay Siliconix
AN822
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps rDS(ON) low, and permits the device to
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Figure 5. Spreading Copper - Si7401DN
45
55
65
75
85
95
105
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Spreading Copper (sq. in.)
100 %
50 %
0 %
Figure 6. Spreading Copper - Junction-to-Ambient Performance
50
60
70
80
90
100
110
120
130
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Spreading Copper (sq. in.)
100 %
0 %
50 %


유사한 부품 번호 - SI7900AEDN

제조업체부품명데이터시트상세설명
logo
Vishay Siliconix
SI7900AEDN VISHAY-SI7900AEDN Datasheet
73Kb / 5P
   Dual N-Channel 20-V (D-S) MOSFET, Common Drain
Rev. A, 07-Jun-03
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유사한 설명 - SI7900AEDN

제조업체부품명데이터시트상세설명
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