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SI7900AEDN-T1-GE3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI7900AEDN-T1-GE3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 72287 S-81544-Rev. C, 07-Jul-08 www.vishay.com 3 Vishay Siliconix Si7900AEDN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 0 5 10 15 20 25 30 0 1234 5 VGS = 5 thru 2 V 1.5 V VDS - Drain-to-Source Voltage (V) 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 VGS = 4.5 V VGS = 2.5 V ID - Drain Current (A) VGS = 1.8 V 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 8.5 A TJ - Junction Temperature (°C) Transfer Characteristics Gate Charge Source-Drain Diode Forward Voltage 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 125 °C VGS - Gate-to-Source Voltage (V) 25 °C 0 1 2 3 4 5 0 246 8 10 12 VDS = 10 V ID = 6.5 A Qg - Total Gate Charge (nC) 1.2 1.5 0.1 10 20 0 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1 |
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