전자부품 데이터시트 검색엔진 |
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BB659 데이터시트(PDF) 3 Page - Siemens Semiconductor Group |
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BB659 데이터시트(HTML) 3 Page - Siemens Semiconductor Group |
3 / 3 page BB 659 Semiconductor Group Jul-28-1998 3 Diode capacitance CT = f (VR) f = 1MHz 0 5 10 15 20 V 30 VR 0 5 10 15 20 25 30 pF 40 CT Temperature coefficient of the diode capacitance TCc = f (VR) 10 0 10 1 10 2 V VR -5 10 -4 10 -3 10 1/°C TCc Reverse current IR = f (TA) VR = 28V -30 -10 10 30 50 70 °C 100 TA 0 10 1 10 2 10 3 10 pA IR Reverse current IR = f (VR) TA = Parameter 10 0 10 1 10 2 V VR -1 10 0 10 1 10 2 10 3 10 pA IR 25°C 85°C Semiconductor Group 3 1998-11-01 |
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유사한 설명 - BB659 |
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