전자부품 데이터시트 검색엔진 |
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BBY51-02W 데이터시트(PDF) 2 Page - Siemens Semiconductor Group |
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BBY51-02W 데이터시트(HTML) 2 Page - Siemens Semiconductor Group |
2 / 3 page BBY 51-02W Semiconductor Group Jul-23-1998 2 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics IR - - 10 nA Reverse current VR = 6 V IR - - 100 Reverse current VR = 6 V, TA = 65 °C AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz 4.5 3.4 2.7 2.5 CT pF 6.1 5.2 4.6 3.7 5.3 4.2 3.5 3.1 2.2 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz - 1.75 1.55 CT1/CT4 2.2 Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHz C1V-C3V 1.78 1.4 pF 0.7 C3V-C4V 0.5 0.3 Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz - Series resistance VR = 1 V, f = 1 GHz Ω rs 0.37 - Case capacitance f = 1 MHz pF - CC - 0.09 Series inductance chip to ground Ls - 0.6 - nH Semiconductor Group 2 1998-11-01 |
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유사한 설명 - BBY51-02W |
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