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BAT15-123ES 데이터시트(PDF) 2 Page - Siemens Semiconductor Group

부품명 BAT15-123ES
상세설명  HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)
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BAT 15
Semiconductor Group
2
Draft A03 1998-04-01
1)
Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General
criterion for burn-out energy is a 3 dB increase in noise figure.
Table 1
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Reverse voltage
V
R
3V
Forward current
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
I
F
100
100
50
50
50
mA
Power dissipation
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
P
tot
100
100
50
50
50
mW
Operating temperature range
T
op
- 55 to + 150
°C
Storage temperature range
T
stg
- 65 to + 175
°C
Soldering temperature
T
sol
+ 220
°C
Burn-out energy
1)
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
E
B
5.0
5.0
2.0
2.0
1.0
Erg


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