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SS2H10 데이터시트(PDF) 1 Page - Vishay Siliconix |
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1 / 4 page SS2H9 & SS2H10 Vishay General Semiconductor Document Number: 88750 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 High-Voltage Surface Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Low profile package • Guardring for overvoltage protection • Ideal for automated placement • Low power losses, high efficiency • Low forward voltage drop • Low leakage current • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 90 V, 100 V IFSM 75 A VF 0.65 V IR 10 µA TJ max. 175 °C DO-214AA (SMB) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS2H9 SS2H10 UNIT Device marking code MS9 MS10 Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at: TL = 130 °C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C |
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