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TSAL5300 데이터시트(PDF) 5 Page - Vishay Siliconix |
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TSAL5300 데이터시트(HTML) 5 Page - Vishay Siliconix |
5 / 6 page Document Number: 81008 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 2.0, 29-Jun-09 5 TSAL5300 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs Vishay Semiconductors Fig. 10 - ∅ 5 mm Devices on Tape AMMOPACK The tape is folded in a concertina arrangement and laid in cardboard box. If components are required with cathode before the anode (figure 12), then start of tape should be taken from the side of the box marked “-”. If components are required with anode before cathode, then tape should be taken from the side of the box marked “+”. Fig. 11 - Tape Direction TAPE DIMENSIONS TSAL5300 OPTION H ± 0.5 mm QUANTITY/BOX CS21Z 22 1000 FSZ 27 1000 GSZ 29 1000 MSZ 25.5 1000 2.54 + 0.6 - 0.1 12.7 ± 0.2 5.08 ± 0.7 Measure limit over 20 index-holes: ± 1 0.9 max. 6.35 ± 0.7 Ø 4 ± 0.2 12.7 ± 1 ± 1 ± 2 19314 Tape feed direction Diodes: cathode before anode Transistors: collector before emitter Label Tape feed direction C B A 94 8667 Diodes: anode before cathode Transistors: emitter before collector |
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