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TSHG5510 데이터시트(PDF) 3 Page - Vishay Siliconix |
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TSHG5510 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 81887 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.1, 25-Jun-09 3 TSHG5510 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Radiant Intensity vs. Forward Current Fig. 6 - Radiant Power vs. Forward Current Fig. 7 - Relative Radiant Power vs. Wavelength Fig. 8 - Relative Radiant Intensity vs. Angular Displacement 100 1000 0.01 0.1 1 10 100 t P - Pulse Duration (ms) 16031 t P/T = 0.01 0.05 0.2 0.5 0.1 0.02 T amb < 50 °C 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 21009 V F - Forward Voltage (V) 0.1 1 10 100 1000 1 10 100 1000 21010 I F - Forward Current (mA) t P = 100 µs t P/T = 0.002 0.1 1 10 100 1000 1 10 100 1000 I F - Forward Current (mA) 21062 t P = 100 µs t P/T = 0.002 740 800 λ- Wavelength (nm) 900 16972_1 0 0.25 0.5 0.75 1.0 1.25 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 - 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90 21012 Angle (°) |
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