전자부품 데이터시트 검색엔진 |
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Q68000-A3360 데이터시트(PDF) 2 Page - Siemens Semiconductor Group |
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Q68000-A3360 데이터시트(HTML) 2 Page - Siemens Semiconductor Group |
2 / 5 page Semiconductor Group 2 BC 635 … BC 639 Maximum Ratings Parameter Values Unit Collector-emitter voltage V Peak collector current Collector current A Junction temperature ˚C Total power dissipation, TC = 90 ˚C1) W Storage temperature range Collector-base voltage Thermal Resistance Junction - ambient1) ≤ 156 K/W 60 1 1.5 0.8 (1) 150 – 65 … + 150 Emitter-base voltage Base current mA 100 Junction - case2) ≤ 75 45 80 60 45 100 BC 637 BC 635 BC 639 5 Peak base current 200 Symbol VCE0 ICM IC Tj Ptot Tstg VCB0 Rth JA VEB0 IB Rth JC IBM 1) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. 2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. |
유사한 부품 번호 - Q68000-A3360 |
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유사한 설명 - Q68000-A3360 |
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