전자부품 데이터시트 검색엔진 |
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BC817-40 데이터시트(PDF) 3 Page - Siemens Semiconductor Group |
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BC817-40 데이터시트(HTML) 3 Page - Siemens Semiconductor Group |
3 / 5 page Semiconductor Group 3 BC 817 BC 818 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. – DC current gain1) IC = 100 mA; VCE = 1 V BC 817-16, BC 818-16 BC 817-25, BC 818-25 BC 817-40, BC 818-40 IC = 300 mA; VCE = 1 V BC 817-16, BC 818-16 BC 817-25, BC 818-25 BC 817-40, BC 818-40 hFE 100 160 250 60 100 170 160 250 350 – – – 250 400 630 – – – V Collector-emitter breakdown voltage IC = 10 mA BC 817 BC 818 V(BR)CE0 45 25 – – – – nA µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C ICB0 – – – – 100 50 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100 µA BC 817 BC 818 V(BR)CB0 50 30 – – – – Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 5–– V Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA VCEsat – – 0.7 Base-emitter saturation voltage1) IC = 500 mA; IB = 50 mA VBEsat ––2 nA Emitter cutoff current, VEB = 4 V IEB0 – – 100 MHz Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT – 170 – AC characteristics pF Output capacitance VCB = 10 V, f = 1 MHz Cobo –6– Input capacitance VEB = 0.5 V, f = 1 MHz Cibo –60 – 1) Pulse test: t ≤ 300 µs, D ≤ 2%. |
유사한 부품 번호 - BC817-40 |
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유사한 설명 - BC817-40 |
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