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BCP69-16 데이터시트(PDF) 2 Page - Siemens Semiconductor Group

부품명 BCP69-16
상세설명  PNP Silicon AF Transistor (For general AF application High collector current High current gain)
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제조업체  SIEMENS [Siemens Semiconductor Group]
홈페이지  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BCP69-16 데이터시트(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
BCP 69
DC current gain1)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
IC = 1 A, VCE = 1 V
hFE
50
85
85
100
160
60
100
160
250
375
160
250
375
MHz
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT
100
AC characteristics
V
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
VCEsat
0.5
Base-emitter voltage1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VBE
0.6
1
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
V(BR)CE0
20
Collector-base breakdown voltage
IC = 10
µA, IB = 0
V(BR)CB0
25
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Emitter-base breakdown voltage
IE = 10
µA, IB = 0
V(BR)EB0
5––
nA
µA
Collector-base cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0
100
100
nA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEB0
100
Collector-emitter breakdown voltage
IC = 10
µA, VBE = 0
V(BR)CES
25
1)
Pulse test conditions: t
300 µs, D = 2 %.


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