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2SD1766 데이터시트(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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2SD1766 데이터시트(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
1 / 2 page TRANSISTOR (NPN) FEATURES Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 MAXIMUM RATINGS (TA=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 μA Emitter cut-off current IEBO VEB=4V, IC=0 1 μA DC current gain hFE(1) VCE=3V, IC=500mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 0.8 V Transition frequency fT VCE=5V, IC=50mA, f=100MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF CLASSIFICATION OF hFE(1) Rank P Q R Range 82-180 120-270 180-390 Marking DBP DBQ DBR SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 2SD1766 1 www.htsemi.com semiconductor JinYu |
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